3DD13003B 1.5a , 700v npn plastic-encapsulated transistor elektronische bauelemente 15-jun-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features power switching applications absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 700 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 9 v collector current - continuous i c 1.5 a collector power dissipation p c 900 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 700 - - v i c =1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 400 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 9 - - v i e =1ma, i c =0 collector cut C off current i cbo - - 100 a v cb =700v, i e =0 i ceo 50 v ce =400v, i b =0 emitter cut C off current i ebo - - 10 a v eb =7v, i c =0 dc current gain h fe 20 - 30 v ce =10v, i c =400ma collector to emitter saturation voltage v ce(sat)1 - - 3 v i c =1.5a, i b =500ma v ce(sat)2 - - 0.8 i c =0.5a, i b =100ma base to emitter saturation voltage v be(sat) - - 1 v i c =0.5a, i b =100ma transition frequency f t 4 - - mhz v ce =10v, i c =100ma, f =1mhz storage time t s - - 4 s i b1 = -i b2 =0.2a fall time t f - - 0.7 s i c =1a 1 11 1 emitter 2 22 2 collector 3 33 3 base to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 a c e f d g h j b
3DD13003B 1.5a , 700v npn plastic-encapsulated transistor elektronische bauelemente 15-jun-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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